
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/22/13
TVS Diode Arrays (SPA
®
Diodes)
Low Capacitance ESD Protection - SP3030 Series
SP3030
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
Peak Current (t
p
=8/20μs) 3.0 A
T
OP
Operating Temperature -40 to 125 °C
T
STOR
Storage Temperature -55 to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range -55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
260 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
5 V
Reverse Leakage Current I
LEAK
V
R
=5V with 1pin at GND 0.1 0.5 µA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Fwd 9.2 V
I
PP
=2A, t
p
=8/20µs, Fwd 10.0 V
ESD Withstand Voltage
1
V
ESD
IEC61000-4-2 (Contact) ±20 kV
IEC61000-4-2 (Air) ±30 kV
Dynamic Resistance R
DYN
(V
C2
-V
C1
)/(I
PP2
-I
PP1
) 0.8 Ω
Diode Capacitance
1
C
I/O-I/O
Reverse Bias=0V, f=1 MHz 0.5 pF
Note: 1. Parameter is guaranteed by design and/or device characterization.
Insertion Loss (S21) I/O to GND
10 1001000
Frequency (MHz)
-10
-8
-6
-7
-9
-4
-5
-2
-1
0
-3
Attenuation (dB)
Normalized Capacitance vs. Reverse Voltage
Bias Voltage (V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Normalized Capacitance (pF)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
HDMI 1.4 Eye Diagram
USB3.0 Eye Diagram
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