Littelfuse QxxxxLTx Series Bedienungsanleitung Seite 2

  • Herunterladen
  • Zu meinen Handbüchern hinzufügen
  • Drucken
  • Seite
    / 8
  • Inhaltsverzeichnis
  • LESEZEICHEN
  • Bewertet. / 5. Basierend auf Kundenbewertungen
Seitenansicht 1
170
Revised: 09/23/13
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Teccor
®
brand Thyristors
4 / 6 / 8 / 10 / 15 Amp Quadracs
QxxxxLTx Series
Absolute Maximum Ratings
Symbol Parameter
Value
Unit
Qxx04LT
Qxx06LT /
Qxx06LTH
Qxx08LT /
Qxx08LTH
Qxx10LT /
Qxx10LTH
Qxx15LT /
Qxx15LTH
I
T(RMS)
RMS forward current
Qxx04LT: T
C
= 95°C
Qxx06LT/Qxx08LT/Qxx10LT: T
C
= 90°C
Qxx15LT: T
C
= 80°C
4681015A
I
TSM
Peak non-repetitive surge current
single half cycle; f = 50Hz;
T
J
(initial) = 25°C
46 65 83 100 167
A
single half cycle; f = 60Hz;
T
J
(initial) = 25°C
55 80 100 120 200
I
2
tI
2
t value for fusing t
p
= 8.3ms 12.5 26.5 41 60 166 A
2
s
di/dt Critical rate-of-rise of on-state current f = 60Hz; T
J
=125°C 50 70 100 A/µs
I
GM
Peak gate current T
J
= 125°C 1.5 A
T
stg
Storage temperature range -40 to 150 °C
T
J
Operating junction temperature range -40 to 125 °C
Note: xx = voltage
Electrical Characteristics (T
J
= 25°C, unless otherwise specified) – Standard Quadrac
Electrical Characteristics (T
J
= 25°C, unless otherwise specified)Alternistor Quadrac
Symbol Test Conditions
Value
Unit
Qxx04LT
Qxx06LT
Qxx08LT
Qxx10LT
Qxx15LT
I
H
I
T
= 200mA (initial) MAX. 40 50 60 60 70 mA
dv/dt
V
D
= V
DRM
; gate open; T
J
=100°C MIN.
400V 75 150 175 200 300
V/s
600V 50 125 150 175 200
V
D
= V
DRM
; gate open; T
J
=125°C MIN.
400V 50 100 120 150 200
600V 50 85 100 120 150
dv/dt(c) di/dt(c) = 0.54 x I
T(rms)
/ ms; T
J
= 125°C MIN. 3 4 V/s
t
gt
(note 1) TYP. 3 s
(1) Reference test circuit in figure 10 and waveform in figure 11; C
T
= 0.1F with 0.1s rise time.
Note: xx = voltage
Symbol Test Conditions
Value
Unit
Qxx06LTH
Qxx08LTH
Qxx10LTH
Qxx15LTH
I
H
I
T
= 20mA (initial) MAX. 50 50 60 70 mA
dv/dt
V
D
= V
DRM
; gate open; T
J
=100°C MIN.
400V 575 925
V/s
600V 425 775
V
D
= V
DRM
; gate open; T
J
=125°C MIN.
400V 450 700
600V 350 600
dv/dt(c) di/dt(c) = 0.54 x I
T(rms)
/ ms; T
J
= 125°C MIN. 25 30 V/s
t
gt
(note 1) TYP. 3 s
(1) Reference test circuit in figure 10 and waveform in figure 11; C
T
= 0.1F with 0.1s rise time.
Note: xx = voltage
Seitenansicht 1
1 2 3 4 5 6 7 8

Kommentare zu diesen Handbüchern

Keine Kommentare